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Composite Transistors
XP06543
Silicon NPN epitaxial planar type
(0.425)
Unit: mm
0.12+0.05 -0.02
For low noise amplification Features
* High transition frequency fT * Two elements incorporated into one package (Each transistor is separated)
0.20.05 6 5 4
1.250.10 2.10.1
1
2
3
(0.65) (0.65)
Basic Part Number
* 2SC3904 x 2
10
1.30.1 2.00.1
0.90.1
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 15 10 2 65 150 150 -55 to +150 Unit V V V mA mW C C
Tr1
1: Emitter (Tr1) 2: Emitter (Tr2) 3: Base (Tr2)
0 to 0.1
Marking Symbol: 9Y Internal Connection
6 5 4
0.9+0.2 -0.1
4: Collector (Tr2) 5: Base (Tr1) 6: Collector (Tr1) SMini6-G1 Package
Tr2
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Transition frequency * Noise figure Collector output capacitance (Common base, input open circuited) Forward transfer gain * Maximum unilateral power gain
* *
1
2
3
Symbol ICBO IEBO hFE fT NF Cob S21e2 GUM
Conditions VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 8 V, IC = 20 mA VCE = 8 V, IC = 20 mA, f = 1.5 GHz VCE = 8 V, IC = 7 mA, f = 1.5 GHz VCB = 10 V, IE = 0, f = 1 MHz VCE = 8 V, IC = 20 mA, f = 1.5 GHz VCE = 8 V, IC = 20 mA, f = 1.5 GHz
Min
Typ
Max 1 1
Unit A A GHz dB pF dB dB
50 7.0
120 8.5 2.2 0.6
300
3.0 1.0
7
9 10
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement
0.20.1
5
Publication date: June 2003
SJJ00217BED
1
XP06543
PT Ta
160 140
IC VCE
30 Ta = 25C IB = 250 A
IC VBE
120 VCE = 8 V Ta = 85C
Total power dissipation PT (mW)
25
100
Collector current IC (mA)
120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160
20 150 A 15 100 A 10 50 A
Collector current IC (mA)
200 A
80 25C 60 -25C
40
5
20
0
0
2
4
6
8
10
12
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
0.1 IC / IB = 10
160 140
hFE IC
VCE = 8 V Ta = 85C
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
10 f = 1 MHz Ta = 25C
Forward current transfer ratio hFE
120 100 80 60 40 20 -25C
25C
Ta = 85C -25C 25C
1
0.01 0.1
1
10
100
0
0.1
1
10
100
0
2
4
6
8
10 12 14 16 18
Collector current IC (mA)
Collector current IC (mA)
Collector-base voltage VCB (V)
2
SJJ00217BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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